Method and apparatus for microwave treatment of dielectric films
US9414445B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2014 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Sep 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a dielectric film on a substrate comprises: depositing a porous dielectric film on a substrate; removing the porogen; stuffing the film with a protective polymeric material; performing at least one intermediate processing step on the stuffed dielectric film; placing the film in a microwave applicator cavity and heating to a first temperature to partially burn out the polymeric material; introducing a controlled amount of a polar solvent into the porosity created by the partial burn out; applying microwave energy to heat the film to a second selected temperature below the boiling point of the solvent to clean away remaining polymeric material; and applying microwave energy to heat the film to a third temperature above the boiling point of the solvent to completely burnout the residues of polymeric material. The interaction of the polar solvent with the microwaves enhances the efficiency of the cleaning process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.