Method for the deposition of a ruthenium containing film using arene diazadiene ruthenium(0) precursors

US9416443B2 · kind B2 · utility

Assignee

• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR

Inventors

• Julien Gatineau · Ibaraki, JP
• Clément Lansalot-Matras · Tsukuba, JP

Key dates

• Filing date: Nov 30, 2012
• Grant date: Aug 16, 2016
• Expiry date: Jun 5, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76841
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention concerns the use of ruthenium containing precursors having the formula (1) wherein R1, R2 . . . R10 are independently selected from H, C1-C4 linear, branched, or cyclic alkyl group, C1-C4 linear, branched, or cyclic alkylsilyl group (mono, bis, or trisalkyl), C1-C4 linear, branched, or cyclic alkylamino group, or a C1-C4 linear, branched, or cyclic fluoroalkyl group (totally fluorinated or not); for the deposition of a Ru containing film on a substrate.