Gas coupled probe for substrate temperature measurement
US9417138B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2013 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Dec 20, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K1/143
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A low pressure temperature sensor for measuring the temperature of a substrate during semiconductor device manufacturing is generally described. Various embodiments describe a gas chamber having an opening disposed within a dielectric plate of a platen with a seal disposed around the opening in the gas chamber such that the opening in the gas chamber may be sealed against the substrate. Furthermore, a temperature sensor and a spring are disposed in the gas chamber, the spring biased to place the temperature sensor in contact with the substrate. Additionally, a gas source configured to pressurize the gas chamber with a low pressure gas in order to increase thermal conductivity between the substrate and the temperature sensor is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.