Method for forming a stacked layer structure
US9418853B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2015 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Apr 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for forming a stacked layer structure, including: first, a recess is provided, next, an oxide layer is formed in the recess, where the oxide layer has a thickness T1, a high-k layer is formed on the oxide layer, a barrier layer is formed on the high-k layer, a silicon layer is then formed on the barrier layer, afterwards, an annealing process is performed on the silicon layer, so as to form an oxygen-containing layer between the silicon layer and the barrier layer, where the oxide layer has a thickness T2 after the annealing process is performed, and satisfies the relationship: (T2−T1)/T1≦0.05, and the silicon layer and the oxygen-containing layer are removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.