Gas treatment method
US9418866B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 21, 2013 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | May 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gas processing method is described. A workpiece is mounted on a platform in a chamber on which a silicon oxide film is formed on a surface of the workpiece; HF gas and a NH3 gas, as reaction gases, are discharged onto the workpiece on the platform from a plurality of gas discharge holes of a shower plate; and a treatment for causing a reaction between the reaction gases and the silicon oxide film on the surface of the workpiece is performed. Subsequently, the reaction product resulting from the treatment is heated and removed by decomposition, whereby etching is performed. The shower plate is divided into a plurality of regions in correspondence with the workpiece, and the gas discharge holes in one or more of the regions are blocked to control a distribution of at least one of the HF gas and the NH3 gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.