Structure and fabrication method for electromigration immortal nanoscale interconnects
US9418934B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2015 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Jun 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5226
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After forming a trench opening including narrow trench portions spaced apart by wide trench portions and forming a stack of a first diffusion barrier layer and a first liner layer on sidewalls and a bottom surface of the trench opening, a reflow process is performed to fill the narrow trench portions but not the wide trench portions with a first conductive material layer. A stack of a second diffusion barrier layer and a second liner layer is formed on portions of the first liner layer and ends of the first conductive material layer exposed by the wide trench portions. A second conductive material layer is deposited to fill the wide trench portions. Portions of the second diffusion barrier layer and the second liner layer located between the first conductive material layer and the second conductive material layer act as vertical blocking boundaries to prevent the electromigration of metal atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.