Source/drain profile engineering for enhanced p-MOSFET
US9419082B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2014 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | May 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/027
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
P-type metal-oxide semiconductor field-effect transistors (pMOSFET's), semiconductor devices comprising the pMOSFET's, and methods of forming pMOSFET's are provided. The pMOSFET's include a silicon-germanium (SiGe) film that has a lower interface in contact with a semiconductor substrate and an upper surface, and the SiGe film has a graded boron doping profile where boron content increases upwardly over a majority of the width of boron-doped SiGe film between the lower interface of the SiGe film and the upper surface of the SiGe film. Methods of forming the pMOSFET's include: providing a semiconductor substrate; depositing a SiGe film on the semiconductor substrate, thereby forming a lower interface of the SiGe film in contact with the semiconductor substrate, and an upper surface of the SiGe film; and doping the SiGe film with boron to form a SiGe film having a graded boron doping profile where boron content increases upwardly over a majority of the width of boron-doped SiGe film between the lower interface of the SiGe film and the upper surface of the SiGe film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.