Split gate semiconductor device with curved gate oxide profile
US9419129B2 · kind B2 · utility
2Cited by
38References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 21, 2009 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Oct 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
A split gate semiconductor device includes a trench gate having a first electrode region and a second electrode region that are separated from each other by a gate oxide layer and an adjacent dielectric layer. The boundary of the gate oxide layer and the dielectric layer is curved to avoid a sharp corner where the gate oxide layer meets the sidewalls of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.