Inventor · San Jose, CA, US

Sharon Shi

16Patents

6h-index

14Co-inventors

59Inventor score

Filing activity: Apr 30, 2004 → Oct 31, 2016

Most-cited inventions

Patent	Title	Area	Cited by	Status
US7183610B2	Super trench MOSFET including buried source electrode and method of fabricating the same	Electricity	74	Expired
US7557409B2	Super trench MOSFET including buried source electrode	Electricity	18	Active
US8368126B2	Trench metal oxide semiconductor with recessed trench material and remote contacts	Electricity	10	Active
US9443974B2	Super junction trench power MOSFET device fabrication	Electricity	10	Active
US9425306B2	Super junction trench power MOSFET devices	Electricity	9	Active
US8409954B2	Ultra-low drain-source resistance power MOSFET	Electricity	8	Expired
US7704836B2	Method of fabricating super trench MOSFET including buried source electrode	Electricity	4	Active
US9431530B2	Super-high density trench MOSFET	Electricity	3	Active
US9484451B2	MOSFET active area and edge termination area charge balance	Electricity	2	Active
US9419129B2	Split gate semiconductor device with curved gate oxide profile	Electricity	2	Active
US9230810B2	System and method for substrate wafer back side and edge cross section seals	Electricity	1	Active
US8883580B2	Trench metal oxide semiconductor with recessed trench material and remote contacts	Electricity	1	Active
US10546750B2	System and method for substrate wafer back side and edge cross section seals	Electricity	0	Active
US9893168B2	Split gate semiconductor device with curved gate oxide profile	Electricity	0	Active
US9887266B2	Ultra-low drain-source resistance power MOSFET	Electricity	0	Active
US10084037B2	MOSFET active area and edge termination area charge balance	Electricity	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.