Semiconductor device and integrated circuit

US9419130B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Andreas Meiser · Unterhaching, DE
• Franz Hirler · Isen, DE
• Peter Irsigler · Ried im Innkreis, AT

Key dates

• Filing date: Nov 27, 2013
• Grant date: Aug 16, 2016
• Expiry date: Nov 27, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/512

Abstract

A semiconductor device in a semiconductor substrate includes a first drain region and a second drain region, a first drift zone and a second drift zone, at least two gate electrodes in the semiconductor substrate, and a channel region between the gate electrodes. The first drift zone is arranged between the channel region and the first drain region, and the second drift zone is arranged between the channel region and the second drain region. The second drain region is disposed on a side of the gate electrode, the side of the gate electrode being remote from the side of the first drain region.