Resistive memory elements, resistive memory cells, and resistive memory devices
US9419220B2 · kind B2 · utility
4Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2015 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Jul 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
Abstract
A method of forming a resistive memory element comprises forming an oxide material over a first electrode. The oxide material is exposed to a plasma process to form a treated oxide material. A second electrode is formed on the treated oxide material. Additional methods of forming a resistive memory element, as well as related resistive memory elements, resistive memory cells, and resistive memory devices are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.