Methods for producing interconnects in semiconductor devices
US9425092B2 · kind B2 · utility
4Cited by
13References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2014 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Mar 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing interconnects on a workpiece includes obtaining a workpiece substrate having a feature, depositing a conductive layer in the feature, to partially or fully fill the feature, depositing a copper fill to completely fill the feature if the feature is partially filled by the conductive layer, applying a copper overburden, thermally treating the workpiece, and removing the overburden to expose the substrate and the metalized feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.