Integrated fan-out structure with guiding trenches in buffer layer
US9425121B2 · kind B2 · utility
19Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2013 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Jan 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1815
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bottom package includes a molding compound, a buffer layer over and contacting the molding compound, and a through-via penetrating through the molding compound. A device die is molded in the molding compound. A guiding trench extends from a top surface of the buffer layer into the buffer layer, wherein the guiding trench is misaligned with the device die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.