Semiconductor structure and method for making same

US9425146B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thomas Fischer · Umkirch, DE
• Juergen Foerster · Bietigheim-Bissingen, DE
• Werner Robl · Regensburg, DE
• Andreas Stueckjuergen · Regensburg, DE

Key dates

• Filing date: Sep 28, 2010
• Grant date: Aug 23, 2016
• Expiry date: Apr 13, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/14
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

One or more embodiments relate to a method for making a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a separation layer over the barrier layer; forming a conductive layer over the separation layer; and wet etching the conductive layer.