Method for determining the performance of a photolithographic mask
US9431212B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2011 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Apr 29, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/24
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention relates to a method for determining a performance of a photolithographic mask at an exposure wavelength with the steps of scanning at least one electron beam across at least one portion of the photolithographic mask, measuring signals generated by the at least one electron beam interacting with the at least one portion of the photolithographic mask, and determining the performance of the at least one portion of the photolithographic mask at the exposure wavelength based on the measured signals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.