Semiconductor device and manufacturing method thereof
US9431256B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2013 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Aug 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6892
Abstract
A method for manufacturing a semiconductor device includes the following steps. At first, two gate stack layers are formed on a semiconductor substrate, wherein each of the gate stack layers includes a top surface and two side surfaces. A conductive material layer is deposited to conformally cover the top surface and the two side surfaces of each of the gate stack layers. Then, a cap layer is deposited to conformally cover the conductive material layer. Finally, the cap layer and the conductive material layer above the top surface of each of the gate stack layers are removed to leave the cap layer adjacent to the two side surfaces of each of the gate stack layers and covering a portion of the conductive material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.