Patent · US Active

Wire bond through-via structure and method

US9431275B2 · kind B2 · utility

1Cited by
1References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 15, 2011
Grant dateAug 30, 2016
Priority date
Expiry dateNov 18, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3011
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A stackable integrated circuit chip layer and module device that avoids the use of electrically conductive elements on the external surfaces of a layer containing an integrated circuit die by taking advantage of conventional wire bonding equipment to provide an electrically conductive path defined by a wire bond segment that is encapsulated in a potting material so as to define an electrically conductive wire bond “through-via” accessible from at least the lower or second surface of the layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.