Methods of producing integrated circuits with an air gap
US9431294B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2014 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Oct 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Integrated circuits and methods for producing the same are provided. A method for producing an integrated circuit includes forming an interconnect trench in a dielectric layer, and forming a conformal barrier layer overlying the dielectric layer and within the interconnect trench. A barrier spacer is formed by removing the conformal barrier layer from an interconnect trench bottom, and an interconnect is formed within the interconnect trench after forming the barrier spacer. An air gap trench is formed in the dielectric layer adjacent to the barrier spacer, and a top cap is formed overlying the interconnect and the air gap trench, where the top cap bridges the air gap trench to produce an air gap in the air gap trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.