Electronic circuit having adjustable transistor device

US9431392B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Walter Rieger · Arnoldstein, AT
• Hans Weber · Villach, AT
• Michael Treu · Villach, AT
• Gerhard Nöbauer · Villach, AT
• Martin Pölzl · Ossiach, AT
• Martin Vielemeyer · Villach, AT
• Franz Hirler · Isen, DE

Key dates

• Filing date: Mar 15, 2013
• Grant date: Aug 30, 2016
• Expiry date: Sep 4, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/111

Abstract

A transistor device includes at least one first type transistor cell including a drift region, a source region, a body region arranged between the source region and the drift region, a drain region, a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a field electrode adjacent the drift region and dielectrically insulated from the drift region by a field electrode dielectric. A gate terminal is coupled to the gate electrode, a source terminal is coupled to the source region, and a control terminal is configured to receive a control signal. A variable resistor is connected between the field electrode and the gate terminal or the source terminal. The variable resistor includes a variable resistance configured to be adjusted by the control signal received at the control terminal.