Image sensor pixel structure
US9431441B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2015 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Aug 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
A back side illumination image sensor pixel structure includes a substrate having a front side and a back side opposite to the front side, a sensing device formed in the substrate to receive an incident light through the back side of the substrate, two oxide-semiconductor field effect transistor (OS FET) devices formed on the front side of the substrate, and a capacitor formed on the front side of the substrate. The two OS FET devices are directly stacked on the sensing device and the capacitor is directly stacked on the OS FET devices. The two OS FET devices overlap the sensing device, and the capacitor overlaps both of the OS FET devices and the sensing device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.