Multi-bit spin torque transfer magnetoresistive random access memory with sub-arrays
US9437272B1 · kind B1 · utility
23Cited by
3References
30Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 11, 2015 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Mar 11, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5607
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A device includes a first magnetic tunnel junction (MTJ) element having a first read margin and a second MTJ element having a second read margin. The first read margin is greater than twice the second read margin. The device also includes an access transistor coupled between the first MTJ element and the second MTJ element. A gate of the access transistor is coupled to a word line. The first MTJ element, the second MTJ element, and the access transistor form a multi-bit spin torque transfer magnetoresistive random access memory (STT-MRAM) memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.