Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
US9437421B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2014 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Jul 2, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45578
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate processing apparatus includes a process chamber in which a substrate is accommodated; a source gas supply system configured to supply a source gas onto the substrate; first and second reactive gas supply systems configured to supply a reactive gas onto the substrate via first and second interconnected reactive gas supply pipes, wherein a gas storage unit is installed at the second reactive gas supply pipe to store the reactive gas and the reactive gas is supplied onto the substrate via the gas storage unit; and a control unit configured to control the source gas supply system to supply the source gas onto the substrate and to control the first and second reactive gas supply systems to supply the reactive gas onto the substrate via the first and second reactive gas supply pipes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.