High mobility power metal-oxide semiconductor field-effect transistors
US9437424B2 · kind B2 · utility
10Cited by
34References
4Claims
0Family size
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Key dates
| Filing date | May 20, 2008 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | May 20, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High mobility P-channel power metal oxide semiconductor field effect transistors. In accordance with an embodiment of the present invention, a power MOSFET is fabricated such that the holes flow in an inversion/accumulation channel, which is along the (110) crystalline plane, or equivalents, and the current flow is in the [110] direction, or equivalents, when a negative potential is applied to the gate with respect to the source. The enhanced channel mobility of holes leads to a reduction of the channel portion of the on-state resistance, thereby advantageously reducing total “on”resistance of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.