Patent · US Active

Thick pseudomorphic nitride epitaxial layers

US9437430B2 · kind B2 · utility

30Cited by
92References
28Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 25, 2008
Grant dateSep 6, 2016
Priority date—
Expiry dateApr 28, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/815
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Semiconductor structures are fabricated to include strained epitaxial layers exceeding a predicted critical thickness thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.