Method for manufacturing a semiconductor device

US9437440B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Kurt Sorschag · Villach, AT
• Daniel Sarlette · Radebeul, DE
• Felix Braun · Dresden, DE
• Marcel Heller · Neustadt in Sachsen, DE
• Dieter Kaiser · Dortmund, DE
• Ingo Meusel · Dresden, DE
• Marko Lemke · Dresden, DE
• Anton Mauder · Kolbermoor, DE
• Helmut Strack · Hersbruck, DE

Key dates

• Filing date: Oct 25, 2013
• Grant date: Sep 6, 2016
• Expiry date: Oct 25, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/117
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for producing a semiconductor device is provided. The method includes: forming in a semiconductor substrate a plurality of semiconductor mesas extending to an upper side so that adjacent semiconductor mesas are spaced apart from each other by one of a substantially empty trench and a trench substantially filled with a sacrificial layer selectively etchable with respect to the semiconductor mesas; forming a support structure mechanically connecting the semiconductor mesas spaced apart from each other by one of the substantially empty trench and the trench substantially filled with the sacrificial layer; and processing the semiconductor substrate from the upper side while the semiconductor mesas are mechanically connected via the support structure.