Low-temperature sidewall image transfer process using ALD metals, metal oxides and metal nitrides
US9437443B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2013 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Sep 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28132
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A SIT method includes the following steps. An SIT mandrel material is deposited onto a substrate and formed into a plurality of SIT mandrels. A spacer material is conformally deposited onto the substrate covering a top and sides of each of the SIT mandrels. Atomic Layer Deposition (ALD) is used to deposit the SIT spacer at low temperatures. The spacer material is selected from the group including a metal, a metal oxide, a metal nitride and combinations including at least one of the foregoing materials. The spacer material is removed from all but the sides of each of the SIT mandrels to form SIT sidewall spacers on the sides of each of the SIT mandrels. The SIT mandrels are removed selective to the SIT sidewall spacers revealing a pattern of the SIT sidewall spacers. The pattern of the SIT sidewall spacers is transferred to the underlying stack or substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.