Self-aligned trench isolation in integrated circuits
US9437470B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2013 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Oct 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system and method for providing electrical isolation between closely spaced devices in a high density integrated circuit (IC) are disclosed herein. An integrated circuit (IC) comprising a substrate, a first device, a second device, and a trench in the substrate and a method of fabricating the same are also discussed. The trench is self-aligned between the first and second devices and comprises a first filled portion and a second filled portion. The first fined portion of the trench comprises a dielectric material that forms a buried trench isolation for providing electrical isolation between the first and second devices. The self-aligned placement of the buried trench isolation allows for higher packing density without negatively affecting the operation of closely spaced devices in a high density IC.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.