Selective gate contact fill metallization
US9437714B1 · kind B1 · utility
14Cited by
7References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2015 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Dec 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Gate metal is selectively deposited on work function material during formation of a replacement metal gate. The work function material is subjected to a hydrogen-based surface treatment to enable the subsequent selective deposition of the gate metal. Work function materials including titanium nitride and tantalum nitride may be processed to facilitate the selective deposition of gate metals, thereby simplifying the gate fabrication process by eliminating the need for subjecting the gate metal to a reactive ion etch or chemical mechanical planarization prior to formation of a dielectric cap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.