Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown
US9437718B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 2015 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | May 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor structure includes forming a first seed layer, a second seed layer and an intrinsic base spaced apart from each other and with the intrinsic base located between the first seed layer and the second seed layer on an insulator layer. The method further includes forming an emitter on the first seed layer and on a first vertical surface of the intrinsic base by epitaxially growing the emitter from the first seed layer and the first vertical surface of the intrinsic base, and forming a collector on the second seed layer and on a second vertical surface of the intrinsic base by epitaxially growing the collector from the second seed layer and the second vertical surface of the intrinsic base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.