Method and apparatus for lithographic mask production
US9442369B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2013 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Jan 9, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70283
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electro-deposition apparatus deposits a first pattern of a lithographic mask. The electro-deposition apparatus then deposits a second pattern of the lithographic mask, at least partially offset from the first pattern. The resulting lithographic mask includes a first pattern having a minimum feature resolution size and maximum pitch, and a second pattern having the same minimum feature resolution size and maximum pitch. The first pattern and second pattern are at least partially offset such that a fractional portion of the second pattern is realized and light transmission is more precisely controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.