Patent · US Active

Method and apparatus for lithographic mask production

US9442369B1 · kind B1 · utility

0Cited by
0References
9Claims
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Key dates

Filing dateJul 24, 2013
Grant dateSep 13, 2016
Priority date
Expiry dateJan 9, 2034

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/70283
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An electro-deposition apparatus deposits a first pattern of a lithographic mask. The electro-deposition apparatus then deposits a second pattern of the lithographic mask, at least partially offset from the first pattern. The resulting lithographic mask includes a first pattern having a minimum feature resolution size and maximum pitch, and a second pattern having the same minimum feature resolution size and maximum pitch. The first pattern and second pattern are at least partially offset such that a fractional portion of the second pattern is realized and light transmission is more precisely controlled.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.