EUV-mirror arrangement, optical system with EUV-mirror arrangement and associated operating method
US9442383B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2013 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Sep 12, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K2201/067
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An EUV mirror arrangement (100) has a multiplicity of mirror elements (110, 111, 112) which are arranged alongside one another and jointly form a mirror surface of the mirror arrangement. Each mirror element has a substrate (120) and a multilayer arrangement (130) applied on the substrate and having a reflective effect with respect to radiation from the extreme ultraviolet range (EUV), said multilayer arrangement comprising a multiplicity of layer pairs (135) having alternate layers composed of a high refractive index layer material and a low refractive index layer material. The multilayer arrangement has an active layer (140) arranged between a radiation entrance surface and the substrate and consisting of a piezoelectrically active layer material, the layer thickness (z) of which active layer can be altered by the action of an electric field. For each active layer provision is made of an electrode arrangement for generating an electric field acting on the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.