Patent · US Active

Resistive memory and method

US9443583B2 · kind B2 · utility

1Cited by

3References

11Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Christian Pacha · Birkenfeld, DE
Tim Schönauer · Munich, DE
Michael Kund · Bad Aibling, DE

Key dates

Filing date	Oct 11, 2011
Grant date	Sep 13, 2016
Priority date	—
Expiry date	Oct 31, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/62
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory device includes a multi gate field effect transistor (MuGFET) having a fin with a contact area. A programmable memory element abuts the fin contact area.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.