Low energy ion beam etch
US9443697B2 · kind B2 · utility
2Cited by
6References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 17, 2012 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Jan 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3174
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A carbonaceous material is removed using a low energy focused ion beam in the presence of an etch-assisting gas. Applicant has discovered that when the beam energy of the FIB is lowered, an etch-assisting gas, such as O2, greatly increases the etch rate. In one example, polyimide material etched using a Xe+ plasma FIB with a beam energy from 8 keV to 14 keV and O2 as an etch-assisting gas, the increase in etch rate can approach 30× as compared to the default mill rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.