Methods for plasma processing
US9443702B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2015 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Jun 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.