Patent · US Active

Multichip power semiconductor device

US9443760B2 · kind B2 · utility

0Cited by

12References

3Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Joachim Mahler · Regensburg, DE
Thomas Bemmerl · Schwandorf, DE
Anton Prueckl · Schierling, DE

Key dates

Filing date	Nov 17, 2014
Grant date	Sep 13, 2016
Priority date	—
Expiry date	Nov 17, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An electronic device includes a first chip carrier and a second chip carrier isolated from the first chip carrier. A first power semiconductor chip is mounted on and electrically connected to the first chip carrier. A second power semiconductor chip is mounted on and electrically connected to the second chip carrier. An electrically insulating material is configured to at least partially surround the first power semiconductor chip and the second power semiconductor chip. An electrical interconnect is configured to electrically connect the first power semiconductor chip to the second power semiconductor chip, wherein the electrical interconnect has at least one of a contact clip and a galvanically deposited conductor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.