Pb-free solder bumps with improved mechanical properties
US9443821B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2014 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Aug 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an electronic device, comprising providing a semiconductor substrate having a first contact and an undoped electroplated lead-free solder bump formed on the first contact. The method also comprises providing a device package substrate having a second contact and a doped lead-free solder layer on the second contact comprising a fourth row transition metal dopant. The method further comprises melting the solder bump and the solder layer while the solder layer and the solder bump are in contact, thereby forming a doped solder bump consisting essentially of Sn, one or both of Ag and Cu, and the fourth row transition metal dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.