Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step
US9443873B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2015 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Dec 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a semiconductor device includes forming a first silicon germanium layer on a substrate, the first silicon germanium layer forming a portion of a first transistor; forming a second silicon germanium layer on the substrate adjacent to the first silicon germanium layer, the second silicon germanium layer forming a portion of a second transistor and having a germanium content that is different than the first silicon germanium layer and a thickness that is substantially the same; growing by an epitaxial process a compressively strained silicon germanium layer on the first silicon germanium layer, and a tensile strained silicon germanium layer on the second silicon germanium layer; patterning a first fin in the compressively strained silicon germanium layer and the first silicon germanium layer; and patterning a second fin in the tensile strained silicon germanium layer and the second silicon germanium layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.