Semiconductor to metal transition

US9443971B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Andreas Haertl · Munich, DE
• Frank Hille · Munich, DE
• Francisco Javier Santos Rodriguez · Villach, AT
• Daniel Schloegl · Villach, AT
• Andre Rainer Stegner · Unterhaching, DE
• Christoph Weiss · Munich, DE

Key dates

• Filing date: Nov 13, 2015
• Grant date: Sep 13, 2016
• Expiry date: Nov 13, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/251
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a diffusion barrier layer, a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers. The first semiconductor region includes a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers, a contact region in contact with the diffusion barrier layer, the contact region having a second concentration of the first charge carriers, wherein the second concentration is higher than the first concentration, and a damage region between the contact region and the transition region. The damage region is configured for reducing the lifetime and/or the mobility of the first charge carriers of the damage region as compared to the lifetime and/or the mobility of the first charge carriers of the contact region and the transition region.