Vertical transistor with air gap spacers

US9443982B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Karthik Balakrishnan · Houston, US
• Kangguo Cheng · Schenectady, US
• Pouya Hashemi · White Plains, US
• Alexander Reznicek · Troy, US

Key dates

• Filing date: Feb 8, 2016
• Grant date: Sep 13, 2016
• Expiry date: Feb 8, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6736

Abstract

A semiconductor structure containing a vertical transistor having air gap spacers located above and below each functional gate structure is provided. Notably, a bottom air gap spacer is located between a bottommost surface of first and second functional gate structures and a topmost surface of a bottom source/drain region, and a top air gap spacer is located between a topmost surface of the first and second functional gate structures and a surface of the top source/drain region.