Patent · US Active

Wafer-level packaging of integrated devices, and manufacturing method thereof

US9446943B2 · kind B2 · utility

0Cited by
5References
15Claims
0Family size

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Key dates

Filing dateMay 27, 2014
Grant dateSep 20, 2016
Priority date
Expiry dateJun 7, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/18162
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A wafer-level packaging, comprising: a first semiconductor body integrating a MEMS structure; a second semiconductor body, including a surface electrical-contact region and an ASIC coupled to the MEMS structure and to said electrical-contact region; a first coating layer, made of resin, which englobes and protects the first body, the second body, and the electrical-contact region; at least one first conductive through via, which extends through the first coating layer in an area corresponding, and electrically coupled, to the first electrical-contact region; an electrical-contact pad, which extends over the first coating layer, electrically coupled to the first conductive through via; a third semiconductor body, integrating an electronic circuit, glued on the first coating layer; a second coating layer, made of resin, which englobes and protects the third body; at least one second conductive through via, which extends completely through the second coating layer in an area corresponding, and electrically coupled, to the electrical-contact pad; and a further electrical-contact pad electrically coupled to the second conductive through via.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.