Non-volatile memory with multi-word line select for defect detection operations
US9449694B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2014 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Sep 4, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/2602
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A stress mode for use in testing non-volatile memory arrays for a number of types of defects is described. More specifically, a multi-word line select option for a given block can be used for a group of selected word lines to be set to the a programming or other high voltage, while the unselected word lines of the block are set to a pass voltage to minimize electric field differences in order to avoid disturb. For example, a group of selected word lines could number 4, 8 or 16. The multi-word line option can be applied to one block per plane, so that if there are two memory planes, for example, two such blocks can be selected simultaneously for the multi-word line option for those blocks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.