Jagdish Sabde
23Patents
7h-index
21Co-inventors
58Inventor score
Filing activity: Jul 10, 2014 → Apr 17, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9881929B1 | Multi-tier memory stack structure containing non-overlapping support pillar structures and method of making thereof | Electricity | 73 | Active |
| US9934872B2 | Erase stress and delta erase loop count methods for various fail modes in non-volatile memory | Physics | 41 | Active |
| US9449698B1 | Block and zone erase algorithm for memory | Physics | 28 | Active |
| US9449694B2 | Non-volatile memory with multi-word line select for defect detection operations | Physics | 14 | Active |
| US9202593B1 | Techniques for detecting broken word lines in non-volatile memories | Physics | 11 | Active |
| US9548129B2 | Word line look ahead read for word line to word line short detection | Physics | 10 | Active |
| US9224502B1 | Techniques for detection and treating memory hole to local interconnect marginality defects | Physics | 9 | Active |
| US9269446B1 | Methods to improve programming of slow cells | Physics | 7 | Active |
| US9564219B2 | Current based detection and recording of memory hole-interconnect spacing defects | Physics | 6 | Active |
| US9953717B2 | NAND structure with tier select gate transistors | Physics | 5 | Active |
| US10032524B2 | Techniques for determining local interconnect defects | Physics | 5 | Active |
| US10564861B2 | Parity relocation for reducing temperature throttling | Emerging Cross-Sectional Technologies | 3 | Active |
| US9530514B1 | Select gate defect detection | Physics | 2 | Active |
| US9653175B2 | Determination of word line to word line shorts between adjacent blocks | Physics | 2 | Active |
| US9496040B2 | Adaptive multi-page programming methods and apparatus for non-volatile memory | Physics | 1 | Active |
| US9484086B2 | Determination of word line to local source line shorts | Physics | 1 | Active |
| US10290354B1 | Partial memory die | Physics | 1 | Active |
| US9514835B2 | Determination of word line to word line shorts between adjacent blocks | Physics | 1 | Active |
| US10242750B2 | High-speed data path testing techniques for non-volatile memory | Physics | 1 | Active |
| US9460809B2 | AC stress mode to screen out word line to word line shorts | Physics | 0 | Active |
| US9240249B1 | AC stress methods to screen out bit line defects | Physics | 0 | Active |
| US9830998B2 | Stress patterns to detect shorts in three dimensional non-volatile memory | Electricity | 0 | Active |
| US10776277B2 | Partial memory die with inter-plane re-mapping | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.