Interface adhesion improvement method
US9449809B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2013 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Apr 15, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure describes methods of an interface adhesion improvement methods used on a transparent substrate for OLED or thin film transistor applications. In one embodiment, a method of forming a buffer layer on a surface of a substrate includes providing a substrate having an planarization material disposed thereon in a processing chamber, supplying a buffer layer gas mixture including a silicon containing gas into the processing chamber, controlling a substrate temperature less than about 100 degrees Celsius, forming a buffer layer on the planarization material, supplying an encapsulating barrier layer deposition gas mixture including a silicon containing gas and a nitrogen containing gas into the processing chamber, and forming an encapsulating barrier layer on the buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.