Patent · US Active

Singulation of semiconductor dies with contact metallization by electrical discharge machining

US9449876B2 · kind B2 · utility

0Cited by

1References

18Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Michael Roesner · Villach, AT
Gudrun Stranzl · Eisenlohrsweg, AT
Manfred Schneegans · Vaterstetten, DE

Key dates

Filing date	Jan 17, 2014
Grant date	Sep 20, 2016
Priority date	—
Expiry date	Jan 17, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of separating individual dies of a semiconductor wafer includes forming a metal layer on a first surface of a semiconductor wafer, the semiconductor wafer including a plurality of dies, separating the plurality of dies from one another, and electrical discharge machining the metal layer into individual segments each of which remains attached to one of the dies. A corresponding semiconductor die produced by such a method is also provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.