Forming punch-through stopper regions in finFET devices
US9450078B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2015 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Apr 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In forming a punch-through stopper region in a fin field effect transistor (finFET) device, a substrate may be etched to form a pair of trenches that define a fin structure. A portion of a first dose of ions may be implanted into the substrate through a bottom wall of each trench to form a pair of first dopant regions that at least partially extend under a channel region of the fin structure. The substrate at the bottom wall of each trench may be etched to increase a depth of each trench. Etching the substrate at the bottom wall of each trench may remove a portion of each first dopant region under each trench. A remaining portion of the pair of first dopant regions under the fin structure may at least partially define the punch-through stopper region of the finFET device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.