Structure and formation method of semiconductor device structure
US9450099B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2015 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Jun 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a protection element over the gate stack. The protection element has an upper portion and a lower portion between the upper portion and the gate stack, and the upper portion is wider than the lower portion. The semiconductor device structure also includes a spacer element over a side surface of the protection element and a sidewall of the gate stack. The semiconductor device structure further includes a conductive contact electrically connected to a conductive feature over the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.