Magnetoresistive element and magnetic memory
US9450177B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2011 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Feb 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
There is provided a magnetoresistive element whose magnetization direction is stable in a direction perpendicular to the film surface and whose magnetoresistance ratio is controlled, as well as magnetic memory using such a magnetoresistive element. By having the material of a ferromagnetic layer forming the magnetoresistive element comprise a ferromagnetic material containing at least one type of 3d transition metal, or a Heusler alloy, to control the magnetoresistance ratio, and by controlling the thickness of the ferromagnetic layer on an atomic layer level, the magnetization direction is changed from being in-plane with the film surface to being perpendicular to the film surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.