Monolithic integrated photonics with lateral bipolar and BiCMOS
US9450381B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2015 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Mar 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/645
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
After forming a first trench extending through a top semiconductor layer and a buried insulator layer and into a handle substrate of a semiconductor-on-insulator (SOI) substrate, a dielectric waveguide material stack including a lower dielectric cladding layer, a core layer and an upper dielectric cladding layer is formed within the first trench. Next, at least one lateral bipolar junction transistor (BJT), which can be a PNP BJT, an NPN BJT or a pair of complementary PNP BJT and NPN BJT, is formed in a remaining portion of the top semiconductor layer. After forming a second trench extending through the dielectric waveguide material stack to re-expose a portion of a bottom surface of the first trench, a laser diode is formed in the second trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.