Magnetic device with spin polarisation
US9455012B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 25, 2015 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Nov 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic device includes a first magnetic layer, known as storage layer, having a uniaxial anisotropy with an easy magnetization axis in the plane of the storage layer and having a magnetization of variable direction having two positions of equilibrium along the easy magnetization axis, a second magnetic layer, known as electron spin polarization layer, having a magnetization perpendicular to that of the storage layer and situated out of plane of the electron spin polarization layer, a device configured to make circulate in the layers, and perpendicularly thereto, a current to switch from one position of equilibrium of the direction of magnetization of the storage layer to the other. The device further includes a device to apply a magnetic field, known as transverse field, the direction of which is substantially parallel to the plane of the storage layer and substantially perpendicular to the easy magnetization axis of the storage layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.