Semiconductor inspection system and methods of inspecting a semiconductor device using the same
US9455121B2 · kind B2 · utility
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11References
18Claims
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Key dates
| Filing date | Aug 17, 2015 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Aug 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3174
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor inspection system including an ion beam milling unit configured to irradiate at least one cluster-ion beam onto a surface of a sample wafer and etch the surface of the sample wafer and an image acquisition unit configured to irradiate an electron beam onto the etched surface of the sample wafer and acquire an image of the etched surface may be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.